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BUK6D23-40EX

BUK6D23-40EX Nexperia USA Inc.

BUK6D23-40E.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 8A/19A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 2.3W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V
Qualification: AEC-Q101
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Technische Details BUK6D23-40EX Nexperia USA Inc.

Description: MOSFET N-CH 40V 8A/19A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V, Power Dissipation (Max): 2.3W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN2020MD-6, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V, Qualification: AEC-Q101.

Weitere Produktangebote BUK6D23-40EX

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BUK6D23-40EX BUK6D23-40EX Nexperia USA Inc. BUK6D23-40E.pdf Description: MOSFET N-CH 40V 8A/19A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 2.3W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V
Qualification: AEC-Q101
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BUK6D23-40EX BUK6D23-40EX Nexperia BUK6D23-40E.pdf MOSFETs BUK6D23-40E/SOT1220/SOT1220
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BUK6D23-40EX NEXPERIA BUK6D23-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 76A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 76A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK6D23-40EX BUK6D23-40EX Nexperia buk6d23-40e.pdf Trans MOSFET N-CH 40V 8A 6-Pin DFN-MD EP T/R Automotive AEC-Q101
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BUK6D23-40EX BUK6D23-40E.pdf
BUK6D23-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 8A/19A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 2.3W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6D23-40EX BUK6D23-40E.pdf
BUK6D23-40EX
Hersteller: Nexperia
MOSFETs BUK6D23-40E/SOT1220/SOT1220
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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BUK6D23-40EX BUK6D23-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 76A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 76A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK6D23-40EX buk6d23-40e.pdf
BUK6D23-40EX
Hersteller: Nexperia
Trans MOSFET N-CH 40V 8A 6-Pin DFN-MD EP T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH