auf Bestellung 2093 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.66 EUR |
| 10+ | 1.69 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.82 EUR |
| 3000+ | 0.72 EUR |
| 6000+ | 0.7 EUR |
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Technische Details BUK6Q12-40PJ Nexperia
Description: BUK6Q12-40P/SOT8002/MLPAK33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 12.4mOhm @ 9.1A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 1mA, Supplier Device Package: MLPAK33, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK6Q12-40PJ nach Preis ab 0.82 EUR bis 2.66 EUR
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BUK6Q12-40PJ | Hersteller : Nexperia USA Inc. |
 Description: BUK6Q12-40P/SOT8002/MLPAK33Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 9.1A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 1mA Supplier Device Package: MLPAK33 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK6Q12-40PJ | Hersteller : Nexperia USA Inc. |
Description: BUK6Q12-40P/SOT8002/MLPAK33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 9.1A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 1mA Supplier Device Package: MLPAK33 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V Qualification: AEC-Q101 |
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