BUK6Y20-30PX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 41A LFPAK56
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
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Technische Details BUK6Y20-30PX Nexperia USA Inc.
Description: MOSFET P-CH 30V 41A LFPAK56, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 66W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 8.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK6Y20-30PX | Hersteller : Nexperia |
MOSFET BUK6Y20-30P/SOT669/LFPAK |
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