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Technische Details BUK6Y32-60PX Nexperia
Description: MOSFET P-CH 60V 40A LFPAK56, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 52.9 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 106W (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 6.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK6Y32-60PX
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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BUK6Y32-60PX | Nexperia USA Inc. |
Description: MOSFET P-CH 60V 40A LFPAK56 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 52.9 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 6.6A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
BUK6Y32-60PX | Nexperia USA Inc. |
Description: MOSFET P-CH 60V 40A LFPAK56 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 52.9 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 6.6A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BUK6Y32-60PX |
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 60V 40A LFPAK56
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 52.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 40A LFPAK56
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 52.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK6Y32-60PX |
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 60V 40A LFPAK56
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 52.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 40A LFPAK56
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 52.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH