BUK7109-75ATE,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A SOT426
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 272W (Tc)
FET Feature: Temperature Sensing Diode
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK7109-75ATE,118 Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A SOT426, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: D2PAK, Qualification: AEC-Q101, Grade: Automotive, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 272W (Tc), FET Feature: Temperature Sensing Diode, Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK7109-75ATE,118
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
BUK7109-75ATE,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A SOT426 Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 272W (Tc) FET Feature: Temperature Sensing Diode Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |