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BUK751R8-40E,127

BUK751R8-40E,127 Nexperia USA Inc.


BUK751R8-40E.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A TO220AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
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Lieferzeit 10-14 Tag (e)
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Technische Details BUK751R8-40E,127 Nexperia USA Inc.

Description: MOSFET N-CH 40V 120A TO220AB, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 349W (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel.

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BUK751R8-40E,127 BUK751R8-40E,127 Hersteller : Nexperia USA Inc. BUK751R8-40E.pdf Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH