BUK753R1-40B,127 NXP Semiconductors
Hersteller: NXP Semiconductors
Trans MOSFET N-CH 40V 75A 3-Pin(3+Tab) TO-220AB Rail Automotive AEC-Q101
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Technische Details BUK753R1-40B,127 NXP Semiconductors
Description: MOSFET N-CH 40V 75A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 6.808 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Packaging: Tube, Operating Temperature: -55°C ~ 175°C (TJ), Qualification: AEC-Q101, Grade: Automotive, Mounting Type: Through Hole, Package / Case: TO-220-3.
Weitere Produktangebote BUK753R1-40B,127 nach Preis ab 5.91 EUR bis 5.91 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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BUK753R1-40B,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 6.808 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Packaging: Tube Operating Temperature: -55°C ~ 175°C (TJ) Qualification: AEC-Q101 Grade: Automotive Mounting Type: Through Hole Package / Case: TO-220-3 |
auf Bestellung 294 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK753R1-40B,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6.808 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
Package / Case: TO-220-3
Description: MOSFET N-CH 40V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6.808 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
Package / Case: TO-220-3
auf Bestellung 294 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 93+ | 5.91 EUR |