BUK7613-100E,118 Nexperia
| Anzahl | Privatkunde |
|---|---|
| 336+ | 1.96 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.71 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK7613-100E,118 Nexperia
Description: NEXPERIA - BUK7613-100E,118 - Leistungs-MOSFET, n-Kanal, 100 V, 72 A, 0.0102 ohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 72A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 182W, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 182W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0102ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0102ohm, SVHC: Lead (17-Jan-2023).
Weitere Produktangebote BUK7613-100E,118 nach Preis ab 1.71 EUR bis 6.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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BUK7613-100E,118 | Nexperia |
 Trans MOSFET N-CH 100V 72A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7613-100E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 72A D2PAK Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 182W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V |
auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7613-100E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 72A D2PAK Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 182W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 4881 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7613-100E,118 | NEXPERIA |
Description: NEXPERIA - BUK7613-100E,118 - Leistungs-MOSFET, n-Kanal, 100 V, 72 A, 0.0102 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 72A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 182W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 182W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0102ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0102ohm SVHC: Lead (17-Jan-2023) |
auf Bestellung 1928 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7613-100E,118 | Nexperia |
MOSFET N-channel TrenchMOS standard level FET |
auf Bestellung 88 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BUK7613-100E,118 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 100V 72A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 100V 72A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 336+ | 1.96 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.71 EUR |
| BUK7613-100E,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 72A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V
Description: MOSFET N-CH 100V 72A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.09 EUR |
| 1600+ | 1.94 EUR |
| 2400+ | 1.87 EUR |
| 4000+ | 1.78 EUR |
| BUK7613-100E,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 72A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 72A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 4881 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.06 EUR |
| 10+ | 3.94 EUR |
| 100+ | 2.73 EUR |
| BUK7613-100E,118 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - BUK7613-100E,118 - Leistungs-MOSFET, n-Kanal, 100 V, 72 A, 0.0102 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 72A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 182W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 182W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0102ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0102ohm
SVHC: Lead (17-Jan-2023)
Description: NEXPERIA - BUK7613-100E,118 - Leistungs-MOSFET, n-Kanal, 100 V, 72 A, 0.0102 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 72A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 182W
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 182W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0102ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0102ohm
SVHC: Lead (17-Jan-2023)
auf Bestellung 1928 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 6.27 EUR |
| 51+ | 4.62 EUR |
| 100+ | 3.45 EUR |
| 500+ | 2.83 EUR |
| 1000+ | 2.76 EUR |
| BUK7613-100E,118 |
|
Hersteller: Nexperia
MOSFET N-channel TrenchMOS standard level FET
MOSFET N-channel TrenchMOS standard level FET
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)