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BUK7613-100E,118

BUK7613-100E,118 Nexperia USA Inc.


BUK7613-100E.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 72A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V
auf Bestellung 5600 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.8 EUR
1600+1.67 EUR
2400+1.61 EUR
Mindestbestellmenge: 800
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Technische Details BUK7613-100E,118 Nexperia USA Inc.

Description: MOSFET N-CH 100V 72A D2PAK, Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 182W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V.

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BUK7613-100E,118 BUK7613-100E,118 Hersteller : Nexperia USA Inc. BUK7613-100E.pdf Description: MOSFET N-CH 100V 72A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4533 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 97.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 6320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.21 EUR
10+3.38 EUR
100+2.34 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
BUK7613-100E,118 BUK7613-100E,118 Hersteller : Nexperia BUK7613-100E.pdf MOSFET N-channel TrenchMOS standard level FET
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH