BUK763R4-30,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4951 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A(Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Bulk
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Technische Details BUK763R4-30,118 Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 4951 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 255W (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A(Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK763R4-30,118
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| BUK763R4-30,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 75A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 4951 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A(Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| BUK763R4-30,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 75A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 4951 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A(Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
BUK763R4-30,118 | Nexperia |
MOSFET Trans MOSFET N-CH 30V 198A 3pin(2+Tab) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BUK763R4-30,118 |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4951 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A(Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4951 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A(Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK763R4-30,118 |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4951 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A(Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4951 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A(Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK763R4-30,118 |
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Hersteller: Nexperia
MOSFET Trans MOSFET N-CH 30V 198A 3pin(2+Tab)
MOSFET Trans MOSFET N-CH 30V 198A 3pin(2+Tab)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


