Produkte > NEXPERIA > BUK7880-55/CUF

BUK7880-55/CUF Nexperia


BUK7880-55-101796.pdf
Hersteller: Nexperia
MOSFET N-channel TrenchMOS standard level FET
auf Bestellung 475 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BUK7880-55/CUF Nexperia

Description: MOSFET N-CH 55V 3.5A SOT223, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 8.3W (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).

Weitere Produktangebote BUK7880-55/CUF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BUK7880-55/CUF BUK7880-55/CUF Nexperia USA Inc. BUK7880-55.pdf Description: MOSFET N-CH 55V 3.5A SOT223
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7880-55/CUF BUK7880-55/CUF Nexperia USA Inc. BUK7880-55.pdf Description: MOSFET N-CH 55V 3.5A SOT223
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8.3W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7880-55/CUF BUK7880-55.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 3.5A SOT223
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7880-55/CUF BUK7880-55.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 3.5A SOT223
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 8.3W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH