BUK7E2R3-40C,127 NXP USA Inc.
auf Bestellung 4893 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 310+ | 1.71 EUR |
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Technische Details BUK7E2R3-40C,127 NXP USA Inc.
Description: MOSFET N-CH 40V 100A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V, Power Dissipation (Max): 333W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11323 pF @ 25 V.
Weitere Produktangebote BUK7E2R3-40C,127
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK7E2R3-40C,127 | Hersteller : NEXPERIA |
 Trans MOSFET N-CH 40V 276A Automotive 3-Pin(3+Tab) I2PAK Rail |
Produkt ist nicht verfügbar |
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_SOT226%20Pkg.jpg "BUK7E2R3-40C,127") |
BUK7E2R3-40C,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11323 pF @ 25 V |
Produkt ist nicht verfügbar |