| Anzahl | Preis |
|---|---|
| 1+ | 4.98 EUR |
| 10+ | 3.24 EUR |
| 100+ | 2.25 EUR |
| 500+ | 1.92 EUR |
| 1000+ | 1.8 EUR |
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Technische Details BUK7J2R4-80MX Nexperia
Description: BUK7J2R4-80M/SOT1023/LFPAK56E, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 64 V, Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 294W (Ta), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 231A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1023, 4-LFPAK, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK7J2R4-80MX nach Preis ab 2.6 EUR bis 5.74 EUR
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BUK7J2R4-80MX | Hersteller : Nexperia USA Inc. |
 Description: BUK7J2R4-80M/SOT1023/LFPAK56EQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 64 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 294W (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 231A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) |
auf Bestellung 663 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7J2R4-80MX | Hersteller : Nexperia USA Inc. |
Description: BUK7J2R4-80M/SOT1023/LFPAK56E Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 64 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 294W (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 231A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Tape & Reel (TR) |
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