| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.19 EUR |
| 10+ | 2.59 EUR |
| 100+ | 1.92 EUR |
| 500+ | 1.57 EUR |
| 1000+ | 1.38 EUR |
| 1500+ | 1.26 EUR |
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Technische Details BUK7K5R1-30E,115 Nexperia
Description: MOSFET 2N-CH 30V 40A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 68W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 40A, Input Capacitance (Ciss) (Max) @ Vds: 2352pF @ 25V, Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56D, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote BUK7K5R1-30E,115 nach Preis ab 1.7 EUR bis 3.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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BUK7K5R1-30E,115 | Nexperia USA Inc. |
 Description: MOSFET 2N-CH 30V 40A LFPAK56DPackaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 2352pF @ 25V Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 2056 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK7K5R1-30E,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2352pF @ 25V
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2352pF @ 25V
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2056 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.31 EUR |
| 10+ | 2.71 EUR |
| 100+ | 2 EUR |
| 500+ | 1.7 EUR |