BUK7K6R8-40E,115 Nexperia
| Anzahl | Preis |
|---|---|
| 1500+ | 0.75 EUR |
| 3000+ | 0.69 EUR |
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Technische Details BUK7K6R8-40E,115 Nexperia
Description: MOSFET 2N-CH 40V 40A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 64W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 40A, Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V, Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56D, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote BUK7K6R8-40E,115 nach Preis ab 0.69 EUR bis 3.24 EUR
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BUK7K6R8-40E,115 | Hersteller : Nexperia |
 Trans MOSFET N-CH 40V 40A 8-Pin LFPAK-D T/R Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7K6R8-40E,115 | Hersteller : Nexperia |
MOSFETs SOT1205 2NCH 40V 40A |
auf Bestellung 2189 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7K6R8-40E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 40A LFPAK56D Qualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V Current - Continuous Drain (Id) @ 25°C: 40A Drain to Source Voltage (Vdss): 40V Power - Max: 64W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 4V @ 1mA |
auf Bestellung 1495 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7K6R8-40E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 40A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 64W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
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