BUK7M12-60EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 60V 53A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.71 EUR |
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Technische Details BUK7M12-60EX Nexperia USA Inc.
Description: MOSFET N-CH 60V 53A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK33, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK7M12-60EX nach Preis ab 0.54 EUR bis 7.04 EUR
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BUK7M12-60EX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 53A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7M12-60EX | Hersteller : Nexperia |
MOSFETs BUK7M12-60E/SOT1210/mLFPAK |
auf Bestellung 1910 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7M12-60EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 53A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2807 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK7M12-60EX | Hersteller : NXP |
N-MOSFET 60V 53A 10V 75W AUTOMOTIVE BUK7M12-60EX TBUK7m12-60ex Anzahl je Verpackung: 2 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK7M12-60EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 60V 53A Automotive 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK7M12-60EX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 53A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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| BUK7M12-60EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W Application: automotive industry Power dissipation: 75W Polarisation: unipolar Kind of package: reel; tape Case: LFPAK33; SOT1210 Mounting: SMD Gate charge: 24.8nC Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 60V Pulsed drain current: 211A Drain current: 37A On-state resistance: 27mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7M12-60EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 37A; Idm: 211A; 75W Application: automotive industry Power dissipation: 75W Polarisation: unipolar Kind of package: reel; tape Case: LFPAK33; SOT1210 Mounting: SMD Gate charge: 24.8nC Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 60V Pulsed drain current: 211A Drain current: 37A On-state resistance: 27mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |