BUK7M6R7-40HX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 40V 50A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK33
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.68 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK7M6R7-40HX Nexperia USA Inc.
Description: MOSFET N-CH 40V 50A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK33, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): +20V, -10V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK7M6R7-40HX nach Preis ab 0.59 EUR bis 2.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BUK7M6R7-40HX | Hersteller : Nexperia |
MOSFETs N-channel 40 V, 8 mohm standard level MOSFET in LFPAK33 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
BUK7M6R7-40HX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 50A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK33 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3788 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| BUK7M6R7-40HX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 50A Automotive 8-Pin LFPAK EP T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||
 |
BUK7M6R7-40HX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 50A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
BUK7M6R7-40HX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 50A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
BUK7M6R7-40HX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 50A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||
| BUK7M6R7-40HX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 282A Power dissipation: 65W Case: LFPAK33; SOT1210 On-state resistance: 13mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| BUK7M6R7-40HX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 282A Power dissipation: 65W Case: LFPAK33; SOT1210 On-state resistance: 13mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |