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BUK7M9R9-60EX

BUK7M9R9-60EX Nexperia


BUK7M9R9-60E.pdf
Hersteller: Nexperia
MOSFETs SOT1210 N-CH 60V 60A
auf Bestellung 27629 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.41 EUR
10+1.1 EUR
100+0.82 EUR
500+0.69 EUR
1000+0.54 EUR
1500+0.53 EUR
3000+0.52 EUR
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Technische Details BUK7M9R9-60EX Nexperia

Description: MOSFET N-CH 60V 60A LFPAK33, Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: LFPAK33, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 79W (Tc), Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.

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BUK7M9R9-60EX BUK7M9R9-60EX Hersteller : Nexperia USA Inc. BUK7M9R9-60E.pdf Description: MOSFET N-CH 60V 60A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK7M9R9-60EX BUK7M9R9-60EX Hersteller : Nexperia USA Inc. BUK7M9R9-60E.pdf Description: MOSFET N-CH 60V 60A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH