auf Bestellung 27629 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.41 EUR |
| 10+ | 1.1 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.54 EUR |
| 1500+ | 0.53 EUR |
| 3000+ | 0.52 EUR |
Produktrezensionen
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Technische Details BUK7M9R9-60EX Nexperia
Description: MOSFET N-CH 60V 60A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK33, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK7M9R9-60EX nach Preis ab 0.67 EUR bis 1.46 EUR
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BUK7M9R9-60EX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 60V 60A LFPAK33Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 992 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7M9R9-60EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 60V 60A Automotive 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK7M9R9-60EX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 60A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK7M9R9-60EX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 60A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK7M9R9-60EX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 60A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK7M9R9-60EX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 60A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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| BUK7M9R9-60EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 30.1nC On-state resistance: 22mΩ Drain current: 42A Power dissipation: 79W Gate-source voltage: ±20V Pulsed drain current: 240A Drain-source voltage: 60V Application: automotive industry Case: LFPAK33; SOT1210 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK7M9R9-60EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 60A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| BUK7M9R9-60EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 240A; 79W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 30.1nC On-state resistance: 22mΩ Drain current: 42A Power dissipation: 79W Gate-source voltage: ±20V Pulsed drain current: 240A Drain-source voltage: 60V Application: automotive industry Case: LFPAK33; SOT1210 |
Produkt ist nicht verfügbar |