BUK7V4R2-40HX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET 2N-CH 40V 98A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 85W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 98A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 2.34 EUR |
| 3000+ | 2.22 EUR |
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Technische Details BUK7V4R2-40HX Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 98A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 85W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 98A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V, Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V, Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56D, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK7V4R2-40HX nach Preis ab 2.76 EUR bis 9.6 EUR
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BUK7V4R2-40HX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 98A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 85W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 98A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5385 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7V4R2-40HX | Hersteller : Nexperia |
MOSFET BUK7V4R2-40H/SOT1205/LFPAK56D |
auf Bestellung 3379 Stücke: Lieferzeit 14-28 Tag (e) |
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| BUK7V4R2-40HX | Hersteller : NXP |
Transistor Dual N-Channel MOSFET; 40V; 20V; 4,2mOhm; 98A; 85W; -55°C~150°C; BUK7V4R2-40HX TBUK7V4R2-40HX Anzahl je Verpackung: 5 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK7V4R2-40HX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 98A 8-Pin LFPAK-D T/R |
Produkt ist nicht verfügbar |
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| BUK7V4R2-40HX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 69.5A; Idm: 393A; 85W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 69.5A Pulsed drain current: 393A Power dissipation: 85W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK7V4R2-40HX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 69.5A; Idm: 393A; 85W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 69.5A Pulsed drain current: 393A Power dissipation: 85W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |