BUK7Y102-100B,115 Nexperia
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.26 EUR |
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Technische Details BUK7Y102-100B,115 Nexperia
Description: MOSFET N-CH 100V 15A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 102mOhm @ 5A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK7Y102-100B,115 nach Preis ab 0.26 EUR bis 1.66 EUR
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BUK7Y102-100B,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 15A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y102-100B,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 15A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y102-100B,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 15A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y102-100B,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 15A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 25500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y102-100B,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 15A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y102-100B,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 15A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y102-100B,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 15A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 102mOhm @ 5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2430 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y102-100B,115 | Hersteller : Nexperia |
MOSFETs SOT669 100V 15A N-CH |
auf Bestellung 1256 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y102-100B,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 15A Automotive 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y102-100B,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 15A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK7Y102-100B,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 15A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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| BUK7Y102-100B,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10.6A; Idm: 60A; 60W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 12.2nC On-state resistance: 265mΩ Drain current: 10.6A Power dissipation: 60W Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 100V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |


