BUK7Y113-100EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 12A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 113mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 17+ | 1.07 EUR |
| 19+ | 0.93 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.54 EUR |
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Technische Details BUK7Y113-100EX Nexperia USA Inc.
Description: MOSFET N-CH 100V 12A LFPAK56, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 113mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK7Y113-100EX
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BUK7Y113-100EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 12A LFPAK56 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 113mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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BUK7Y113-100EX | Hersteller : Nexperia |
MOSFETs N-channel 100 V, 12 mohm standard level MOSFET in LFPAK56 |
Produkt ist nicht verfügbar |