BUK7Y12-100EX Nexperia
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.42 EUR |
| 3000+ | 1.32 EUR |
| 7500+ | 1.27 EUR |
| 9000+ | 1.24 EUR |
| 10500+ | 1.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK7Y12-100EX Nexperia
Description: MOSFET N-CH 100V 85A LFPAK56, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 5067 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 238W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK7Y12-100EX nach Preis ab 1.42 EUR bis 5.63 EUR
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BUK7Y12-100EX | Nexperia |
 Trans MOSFET N-CH 100V 85A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y12-100EX | Nexperia |
Trans MOSFET N-CH 100V 85A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y12-100EX | Nexperia |
MOSFETs SOT669 100V 85A |
auf Bestellung 17927 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y12-100EX | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 85A LFPAK56 Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 238W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 5067 pF @ 25 V |
auf Bestellung 1189 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y12-100EX | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 85A LFPAK56 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 5067 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 238W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
auf Bestellung 1189 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 1189 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BUK7Y12-100EX |
|
Hersteller: Nexperia
Trans MOSFET N-CH 100V 85A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 100V 85A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.49 EUR |
| BUK7Y12-100EX |
|
Hersteller: Nexperia
Trans MOSFET N-CH 100V 85A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 100V 85A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 2.26 EUR |
| BUK7Y12-100EX |
|
Hersteller: Nexperia
MOSFETs SOT669 100V 85A
MOSFETs SOT669 100V 85A
auf Bestellung 17927 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.8 EUR |
| 10+ | 3.08 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.77 EUR |
| 1000+ | 1.57 EUR |
| 1500+ | 1.49 EUR |
| 3000+ | 1.42 EUR |
| BUK7Y12-100EX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 85A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 238W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5067 pF @ 25 V
Description: MOSFET N-CH 100V 85A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 238W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5067 pF @ 25 V
auf Bestellung 1189 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.63 EUR |
| 10+ | 3.64 EUR |
| 50+ | 2.77 EUR |
| 100+ | 2.49 EUR |
| BUK7Y12-100EX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 85A LFPAK56
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5067 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 238W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 85A LFPAK56
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5067 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 238W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
auf Bestellung 1189 Stücke:
Lieferzeit 10-14 Tag (e)