BUK7Y12-55B,115 Nexperia
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.8 EUR |
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Technische Details BUK7Y12-55B,115 Nexperia
Description: MOSFET N-CH 55V 61.8A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61.8A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V, Power Dissipation (Max): 105W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 35.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2067 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK7Y12-55B,115 nach Preis ab 0.81 EUR bis 2.69 EUR
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BUK7Y12-55B,115 | Hersteller : Nexperia |
 Trans MOSFET N-CH 55V 61.8A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y12-55B,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 55V 61.8A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61.8A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 35.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2067 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y12-55B,115 | Hersteller : Nexperia |
MOSFETs N-channel TrenchMOS standard level FET |
auf Bestellung 8091 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y12-55B,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 55V 61.8A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61.8A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 35.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2067 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8752 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y12-55B,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 55V 61.8A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y12-55B,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 55V 61.8A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK7Y12-55B,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 55V 61.8A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK7Y12-55B,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 55V 61.8A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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| BUK7Y12-55B,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 61.8A; Idm: 247A; 105W Application: automotive industry Power dissipation: 105W Polarisation: unipolar Kind of package: reel; tape Gate charge: 35.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 247A Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Drain-source voltage: 55V Drain current: 61.8A On-state resistance: 12mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y12-55B,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 61.8A; Idm: 247A; 105W Application: automotive industry Power dissipation: 105W Polarisation: unipolar Kind of package: reel; tape Gate charge: 35.2nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 247A Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Drain-source voltage: 55V Drain current: 61.8A On-state resistance: 12mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |