BUK7Y65-100EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 100V 19A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1023 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.81 EUR |
| 3000+ | 0.72 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK7Y65-100EX Nexperia USA Inc.
Description: MOSFET N-CH 100V 19A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V, Power Dissipation (Max): 64W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1023 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK7Y65-100EX nach Preis ab 0.95 EUR bis 1.9 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BUK7Y65-100EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 19A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1023 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4339 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||
 |
BUK7Y65-100EX | Hersteller : Nexperia |
MOSFET N-channel 100 V 65 mo FET |
auf Bestellung 5178 Stücke: Lieferzeit 14-28 Tag (e) |
|||||||||||
 |
BUK7Y65-100EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 19A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
| BUK7Y65-100EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13.4A; Idm: 76A; 64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13.4A Pulsed drain current: 76A Power dissipation: 64W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 0.18Ω Mounting: SMD Gate charge: 17.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
| BUK7Y65-100EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13.4A; Idm: 76A; 64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13.4A Pulsed drain current: 76A Power dissipation: 64W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 0.18Ω Mounting: SMD Gate charge: 17.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |