BUK7Y6R0-60EX Nexperia
auf Bestellung 72000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.93 EUR |
| 3000+ | 0.88 EUR |
| 9000+ | 0.8 EUR |
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Technische Details BUK7Y6R0-60EX Nexperia
Description: MOSFET N-CH 60V 100A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4021 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK7Y6R0-60EX nach Preis ab 0.9 EUR bis 3.28 EUR
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BUK7Y6R0-60EX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 60V 100A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4021 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y6R0-60EX | Hersteller : Nexperia |
MOSFETs SOT669 N-CH 60V 100A |
auf Bestellung 40876 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y6R0-60EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4021 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 5813 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y6R0-60EX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 100A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y6R0-60EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 60V 100A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK7Y6R0-60EX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 100A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK7Y6R0-60EX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 100A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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| BUK7Y6R0-60EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 85A; Idm: 482A; 195W Kind of package: reel; tape Polarisation: unipolar Gate charge: 45.4nC On-state resistance: 13.5mΩ Drain current: 85A Gate-source voltage: ±20V Drain-source voltage: 60V Pulsed drain current: 482A Power dissipation: 195W Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK7Y6R0-60EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 85A; Idm: 482A; 195W Kind of package: reel; tape Polarisation: unipolar Gate charge: 45.4nC On-state resistance: 13.5mΩ Drain current: 85A Gate-source voltage: ±20V Drain-source voltage: 60V Pulsed drain current: 482A Power dissipation: 195W Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |