BUK7Y7R0-40HX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 40V 68A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 64W (Ta)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 1.13 EUR |
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Technische Details BUK7Y7R0-40HX Nexperia USA Inc.
Description: MOSFET N-CH 40V 68A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V, Power Dissipation (Max): 64W (Ta), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK7Y7R0-40HX nach Preis ab 0.95 EUR bis 2.57 EUR
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BUK7Y7R0-40HX | Hersteller : Nexperia |
MOSFET BUK7Y7R0-40H/SOT669/LFPAK |
auf Bestellung 27963 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK7Y7R0-40HX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 68A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Power Dissipation (Max): 64W (Ta) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2995 Stücke: Lieferzeit 21-28 Tag (e) |
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| BUK7Y7R0-40HX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 48A Pulsed drain current: 272A Power dissipation: 64W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 13.6mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK7Y7R0-40HX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 68A Automotive 5-Pin(4+Tab) LFPAK T/R |
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| BUK7Y7R0-40HX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 48A Pulsed drain current: 272A Power dissipation: 64W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 13.6mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |