BUK7Y7R2-60EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V LFPAK56 PWR-SO8
Qualification: AEC-Q101
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Power Dissipation (Max): 167W (Tc)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK7Y7R2-60EX Nexperia USA Inc.
Description: MOSFET N-CH 60V LFPAK56 PWR-SO8, Qualification: AEC-Q101, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: LFPAK56, Power-SO8, Power Dissipation (Max): 167W (Tc), Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK7Y7R2-60EX
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
BUK7Y7R2-60EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V LFPAK56 PWR-SO8 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: LFPAK56, Power-SO8 Power Dissipation (Max): 167W (Tc) Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar |
|
 |
BUK7Y7R2-60EX | Hersteller : Nexperia |
MOSFET BUK7Y7R2-60E/SOT669/LFPAK |
Produkt ist nicht verfügbar |
|
| BUK7Y7R2-60EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 407A; 167W Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 50.8nC On-state resistance: 16.1mΩ Drain current: 72A Power dissipation: 167W Gate-source voltage: ±20V Pulsed drain current: 407A Drain-source voltage: 60V Application: automotive industry Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |