BUK7Y7R6-40EX Nexperia
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.56 EUR |
| 3000+ | 0.52 EUR |
| 4500+ | 0.49 EUR |
| 7500+ | 0.44 EUR |
| 10500+ | 0.4 EUR |
| 15000+ | 0.38 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
1500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK7Y7R6-40EX Nexperia
Description: MOSFET N-CH 40V 79A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V, Power Dissipation (Max): 94.3W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 26.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK7Y7R6-40EX nach Preis ab 0.42 EUR bis 2.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BUK7Y7R6-40EX | Nexperia |
 Trans MOSFET N-CH 40V 79A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101 |
auf Bestellung 252000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
BUK7Y7R6-40EX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 79A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Power Dissipation (Max): 94.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
BUK7Y7R6-40EX | Nexperia |
Trans MOSFET N-CH 40V 79A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101 |
auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
BUK7Y7R6-40EX | Nexperia |
MOSFETs SOT669 N-CH 40V 79A |
auf Bestellung 1471 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
BUK7Y7R6-40EX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 79A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Power Dissipation (Max): 94.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
BUK7Y7R6-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 94.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 56A Power dissipation: 94.3W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 26.2nC Application: automotive industry |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BUK7Y7R6-40EX |
|
Hersteller: Nexperia
Trans MOSFET N-CH 40V 79A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 40V 79A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101
auf Bestellung 252000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.56 EUR |
| 3000+ | 0.54 EUR |
| 4500+ | 0.5 EUR |
| 7500+ | 0.46 EUR |
| 10500+ | 0.44 EUR |
| 15000+ | 0.42 EUR |
| BUK7Y7R6-40EX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 79A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 94.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 79A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 94.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.61 EUR |
| BUK7Y7R6-40EX |
|
Hersteller: Nexperia
Trans MOSFET N-CH 40V 79A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 40V 79A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 478+ | 1.39 EUR |
| 532+ | 1.24 EUR |
| 1000+ | 1.12 EUR |
| 10000+ | 0.98 EUR |
| BUK7Y7R6-40EX |
|
Hersteller: Nexperia
MOSFETs SOT669 N-CH 40V 79A
MOSFETs SOT669 N-CH 40V 79A
auf Bestellung 1471 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.2 EUR |
| 10+ | 1.37 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.69 EUR |
| 1500+ | 0.61 EUR |
| 3000+ | 0.49 EUR |
| BUK7Y7R6-40EX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 79A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 94.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 79A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Power Dissipation (Max): 94.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.23 EUR |
| 16+ | 1.39 EUR |
| 50+ | 1.02 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.7 EUR |
| BUK7Y7R6-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 94.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Power dissipation: 94.3W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 26.2nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 94.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Power dissipation: 94.3W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 26.2nC
Application: automotive industry
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)