
BUK7Y7R6-40EX Nexperia
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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1500+ | 0.57 EUR |
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Technische Details BUK7Y7R6-40EX Nexperia
Description: MOSFET N-CH 40V 79A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V, Power Dissipation (Max): 94.3W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 26.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK7Y7R6-40EX nach Preis ab 0.41 EUR bis 2.48 EUR
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BUK7Y7R6-40EX | Hersteller : Nexperia |
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auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y7R6-40EX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Power Dissipation (Max): 94.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1390 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y7R6-40EX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 94.3W Application: automotive industry Power dissipation: 94.3W Polarisation: unipolar Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD Gate charge: 26.2nC Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 56A On-state resistance: 7.6mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 624 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK7Y7R6-40EX | Hersteller : NEXPERIA |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 94.3W Application: automotive industry Power dissipation: 94.3W Polarisation: unipolar Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD Gate charge: 26.2nC Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 56A On-state resistance: 7.6mΩ Type of transistor: N-MOSFET |
auf Bestellung 624 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y7R6-40EX | Hersteller : Nexperia |
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auf Bestellung 4503 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y7R6-40EX | Hersteller : Nexperia |
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auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y7R6-40EX | Hersteller : NEXPERIA |
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BUK7Y7R6-40EX | Hersteller : NEXPERIA |
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BUK7Y7R6-40EX | Hersteller : Nexperia |
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Produkt ist nicht verfügbar |
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BUK7Y7R6-40EX | Hersteller : Nexperia |
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Produkt ist nicht verfügbar |
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BUK7Y7R6-40EX | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Power Dissipation (Max): 94.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |