BUK7Y8R7-60EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 87A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3159 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 9+ | 2.08 EUR |
| 13+ | 1.44 EUR |
| 100+ | 1.12 EUR |
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Technische Details BUK7Y8R7-60EX Nexperia USA Inc.
Description: MOSFET N-CH 60V 87A LFPAK56, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 3159 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 147W (Tc), Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 87A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK7Y8R7-60EX nach Preis ab 0.85 EUR bis 2.9 EUR
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BUK7Y8R7-60EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 347A; 147W Type of transistor: N-MOSFET Mounting: SMD Gate charge: 46nC On-state resistance: 19.5mΩ Power dissipation: 147W Drain current: 61A Drain-source voltage: 60V Pulsed drain current: 347A Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Kind of channel: enhancement Case: LFPAK56; PowerSO8; SOT669 |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y8R7-60EX | Hersteller : Nexperia |
MOSFETs SOT669 N-CH 60V 87A |
auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK7Y8R7-60EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 87A LFPAK56 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 3159 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
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