Technische Details BUK7Y98-80EX Nexperia
Description: MOSFET N-CH 80V 12.3A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 37W (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 12.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), Qualification: AEC-Q100, Grade: Automotive.
Weitere Produktangebote BUK7Y98-80EX
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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BUK7Y98-80EX | Nexperia |
 Trans MOSFET N-CH 80V 12.3A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
BUK7Y98-80EX | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 12.3A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 12.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BUK7Y98-80EX | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 12.3A LFPAK56 Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 12.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Qualification: AEC-Q100 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BUK7Y98-80EX | Nexperia |
MOSFETs N-channel 80 V, 9.9 mohm standard level MOSFET in LFPAK56 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BUK7Y98-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 8.7A; Idm: 49A; 37W On-state resistance: 246mΩ Mounting: SMD Pulsed drain current: 49A Power dissipation: 37W Gate charge: 8.5nC Polarisation: unipolar Drain current: 8.7A Kind of channel: enhancement Drain-source voltage: 80V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BUK7Y98-80EX |
|
Hersteller: Nexperia
Trans MOSFET N-CH 80V 12.3A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 80V 12.3A 5-Pin(4+Tab) LFPAK T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y98-80EX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 12.3A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: MOSFET N-CH 80V 12.3A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y98-80EX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 12.3A LFPAK56
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Qualification: AEC-Q100
Grade: Automotive
Description: MOSFET N-CH 80V 12.3A LFPAK56
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y98-80EX |
|
Hersteller: Nexperia
MOSFETs N-channel 80 V, 9.9 mohm standard level MOSFET in LFPAK56
MOSFETs N-channel 80 V, 9.9 mohm standard level MOSFET in LFPAK56
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y98-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 8.7A; Idm: 49A; 37W
On-state resistance: 246mΩ
Mounting: SMD
Pulsed drain current: 49A
Power dissipation: 37W
Gate charge: 8.5nC
Polarisation: unipolar
Drain current: 8.7A
Kind of channel: enhancement
Drain-source voltage: 80V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 8.7A; Idm: 49A; 37W
On-state resistance: 246mΩ
Mounting: SMD
Pulsed drain current: 49A
Power dissipation: 37W
Gate charge: 8.5nC
Polarisation: unipolar
Drain current: 8.7A
Kind of channel: enhancement
Drain-source voltage: 80V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH