BUK9237-55,118 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1236 pF @ 25 V
Description: MOSFET N-CH 55V 32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1236 pF @ 25 V
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Technische Details BUK9237-55,118 NXP USA Inc.
Description: MOSFET N-CH 55V 32A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: DPAK, Part Status: Obsolete, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1236 pF @ 25 V.
Weitere Produktangebote BUK9237-55,118
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BUK9237-55,118 | Hersteller : NXP Semiconductors | MOSFET TAPE13 PWR-MOS |
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