BUK95180-100A,127 NXP
Hersteller: NXPDescription: NXP - BUK95180-100A,127 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1936 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details BUK95180-100A,127 NXP
Description: MOSFET N-CH 100V 11A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-220AB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK95180-100A,127
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BUK95180-100A,127 | Hersteller : NXP USA Inc. |
Description: MOSFET N-CH 100V 11A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-220AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BUK95180-100A,127 | Hersteller : Nexperia |
MOSFET RAIL PWR-MOS |
Produkt ist nicht verfügbar |