BUK9520-100A,127 NXP Semiconductors

Description: MOSFET N-CH 100V 63A TO220AB, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 200W (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 6385 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-220AB.