BUK9616-75B,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 67A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 800+ | 1.24 EUR |
| 1600+ | 1.14 EUR |
| 2400+ | 1.09 EUR |
| 4000+ | 1.05 EUR |
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Technische Details BUK9616-75B,118 Nexperia USA Inc.
Description: MOSFET N-CH 75V 67A D2PAK, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 157W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 67A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK9616-75B,118 nach Preis ab 1.13 EUR bis 3.73 EUR
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BUK9616-75B,118 | Nexperia |
MOSFETs BUK9616-75B/SOT404/D2PAK |
auf Bestellung 4348 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9616-75B,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 75V 67A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 6355 Stücke: Lieferzeit 10-14 Tag (e) |
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| BUK9616-75B,118 |
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Hersteller: Nexperia
MOSFETs BUK9616-75B/SOT404/D2PAK
MOSFETs BUK9616-75B/SOT404/D2PAK
auf Bestellung 4348 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.08 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.52 EUR |
| 800+ | 1.13 EUR |
| BUK9616-75B,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 67A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 67A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6355 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.73 EUR |
| 10+ | 2.4 EUR |
| 100+ | 1.64 EUR |