BUK962R5-60E,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 17450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 3.38 EUR |
| 1600+ | 3.17 EUR |
| 2400+ | 3.08 EUR |
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Technische Details BUK962R5-60E,118 Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 17450 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Active, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 357W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V, Qualification: AEC-Q101, Grade: Automotive, Current - Continuous Drain (Id) @ 25°C: 120A (Tc).
Weitere Produktangebote BUK962R5-60E,118 nach Preis ab 3.09 EUR bis 9.13 EUR
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BUK962R5-60E,118 | Nexperia |
MOSFETs SOT404 N-CH 60V 120A |
auf Bestellung 1621 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK962R5-60E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A D2PAK Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 17450 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V |
auf Bestellung 3038 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BUK962R5-60E,118 |
|
Hersteller: Nexperia
MOSFETs SOT404 N-CH 60V 120A
MOSFETs SOT404 N-CH 60V 120A
auf Bestellung 1621 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.39 EUR |
| 10+ | 4.8 EUR |
| 100+ | 3.89 EUR |
| 800+ | 3.09 EUR |
| BUK962R5-60E,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 17450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Description: MOSFET N-CH 60V 120A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 17450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
auf Bestellung 3038 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.13 EUR |
| 10+ | 6.05 EUR |
| 100+ | 4.3 EUR |