Technische Details BUK962R6-40E,118 NEXPERIA
Description: MOSFET N-CH 40V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V, Power Dissipation (Max): 263W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: D2PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 80.6 nC @ 32 V, Input Capacitance (Ciss) (Max) @ Vds: 10285 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK962R6-40E,118
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| BUK962R6-40E,118 | Hersteller : NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 885A; 263W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 263W Case: D2PAK; SOT404 Gate-source voltage: ±10V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 80.6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 885A Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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BUK962R6-40E,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80.6 nC @ 32 V Input Capacitance (Ciss) (Max) @ Vds: 10285 pF @ 25 V Qualification: AEC-Q101 |
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BUK962R6-40E,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80.6 nC @ 32 V Input Capacitance (Ciss) (Max) @ Vds: 10285 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BUK962R6-40E,118 | Hersteller : Nexperia |
MOSFET N-channel TrenchMOS logic level FET |
Produkt ist nicht verfügbar |
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| BUK962R6-40E,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 885A; 263W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 263W Case: D2PAK; SOT404 Gate-source voltage: ±10V On-state resistance: 5.4mΩ Mounting: SMD Gate charge: 80.6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 885A Application: automotive industry |
Produkt ist nicht verfügbar |