BUK9637-100E,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 31A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2681 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 800+ | 1.22 EUR |
| 1600+ | 1.13 EUR |
| 2400+ | 1.08 EUR |
| 4000+ | 1.03 EUR |
| 5600+ | 1 EUR |
| 8000+ | 0.97 EUR |
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Technische Details BUK9637-100E,118 Nexperia USA Inc.
Description: NEXPERIA - BUK9637-100E,118 - Leistungs-MOSFET, n-Kanal, 100 V, 31 A, 0.031 ohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 31A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.7V, euEccn: NLR, Verlustleistung: 96W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 5V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.031ohm, SVHC: Lead (25-Jun-2025).
Weitere Produktangebote BUK9637-100E,118 nach Preis ab 1 EUR bis 3.71 EUR
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BUK9637-100E,118 | Hersteller : Nexperia |
MOSFETs BUK9637-100E/SOT404/D2PAK |
auf Bestellung 4739 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9637-100E,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 31A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2681 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 11502 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9637-100E,118 | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9637-100E,118 - Leistungs-MOSFET, n-Kanal, 100 V, 31 A, 0.031 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 31A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 96W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.031ohm SVHC: Lead (25-Jun-2025) |
auf Bestellung 5207 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK9637-100E,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 123A; 96W Application: automotive industry Kind of package: reel; tape Case: D2PAK; SOT404 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Gate charge: 22.8nC On-state resistance: 0.102Ω Gate-source voltage: ±10V Drain current: 22A Power dissipation: 96W Drain-source voltage: 100V Pulsed drain current: 123A Polarisation: unipolar |
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