BUK964R7-80E,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 324W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 800+ | 2.45 EUR |
| 1600+ | 2.35 EUR |
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Technische Details BUK964R7-80E,118 Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Last Time Buy, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 324W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK964R7-80E,118 nach Preis ab 3.12 EUR bis 6.69 EUR
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BUK964R7-80E,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 120A D2PAK Qualification: AEC-Q101 Grade: Automotive Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Last Time Buy Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 324W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel |
auf Bestellung 4769 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK964R7-80E,118 | Hersteller : Nexperia |
MOSFET BUK964R7-80E/SOT404/D2PAK |
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