BUK98150-55A/CUF

Hersteller: NXP
Транзистори

Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 5.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 5.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 5A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101

Hersteller: Nexperia
MOSFETs The factory is currently not accepting orders for this product.

Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3A; Idm: 22A; 8W; SC73,SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3A
Pulsed drain current: 22A
Power dissipation: 8W
Case: SC73; SOT223
Gate-source voltage: ±15V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry