BUK9880-55A/CUX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details BUK9880-55A/CUX Nexperia USA Inc.
Description: MOSFET N-CH 55V 7A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 10V, Power Dissipation (Max): 8W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9880-55A/CUX
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BUK9880-55A/CUX | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 7A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 10V Power Dissipation (Max): 8W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BUK9880-55A/CUX | Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BUK9880-55A/CUX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 30A; 8W; SC73,SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 4A Pulsed drain current: 30A Power dissipation: 8W Case: SC73; SOT223 On-state resistance: 147mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BUK9880-55A/CUX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK9880-55A/CUX |
|
Hersteller: Nexperia
MOSFETs The factory is currently not accepting orders for this product.
MOSFETs The factory is currently not accepting orders for this product.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK9880-55A/CUX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 30A; 8W; SC73,SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 30A
Power dissipation: 8W
Case: SC73; SOT223
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; Idm: 30A; 8W; SC73,SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Pulsed drain current: 30A
Power dissipation: 8W
Case: SC73; SOT223
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH