BUK9E08-55B,127 NXP

Description: MOSFET N-CH 55V 75A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V, Power Dissipation (Max): 203W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: I2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5280 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.