BUK9E6R1-100E,127 Nexperia USA Inc.

Description: MOSFET N-CH 100V 120A I2PAK, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 349W (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 17.46 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.