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BUK9K13-60EX

BUK9K13-60EX Nexperia

BUK9K13-60E.pdf
Hersteller: Nexperia
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Technische Details BUK9K13-60EX Nexperia

Description: MOSFET 2N-CH 60V 40A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 64W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 40A, Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V, Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V, Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Grade: Automotive, Qualification: AEC-Q100.

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BUK9K13-60EX BUK9K13-60EX Hersteller : Nexperia USA Inc. BUK9K13-60E.pdf Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
10+2.41 EUR
100+1.64 EUR
500+1.31 EUR
Mindestbestellmenge: 5
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BUK9K13-60EX BUK9K13-60EX Hersteller : Nexperia 580584817483720buk9k13-60e.pdf Trans MOSFET N-CH 60V 40A 8-Pin LFPAK-D T/R Automotive AEC-Q101
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BUK9K13-60EX BUK9K13-60EX Hersteller : Nexperia USA Inc. BUK9K13-60E.pdf Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
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BUK9K13-60EX Hersteller : NEXPERIA BUK9K13-60E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 33A; Idm: 190A; 64W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 190A
Power dissipation: 64W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 28.3mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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