BUK9K18-40E,115 Nexperia
| Anzahl | Preis |
|---|---|
| 2+ | 2.43 EUR |
| 10+ | 1.49 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.69 EUR |
| 1500+ | 0.66 EUR |
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Technische Details BUK9K18-40E,115 Nexperia
Description: MOSFET 2N-CH 40V 30A LFPAK56D, Qualification: AEC-Q101, Grade: Automotive, Vgs(th) (Max) @ Id: 2.1V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V, Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1061pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 30A, Drain to Source Voltage (Vdss): 40V, Power - Max: 38W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: LFPAK56D.
Weitere Produktangebote BUK9K18-40E,115 nach Preis ab 0.81 EUR bis 2.43 EUR
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BUK9K18-40E,115 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET 2N-CH 40V 30A LFPAK56DQualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 2.1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1061pF @ 25V Current - Continuous Drain (Id) @ 25°C: 30A Drain to Source Voltage (Vdss): 40V Power - Max: 38W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Cut Tape (CT) |
auf Bestellung 3430 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K18-40E,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 30A 8-Pin LFPAK-D T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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BUK9K18-40E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 30A LFPAK56D Qualification: AEC-Q101 Grade: Automotive Vgs(th) (Max) @ Id: 2.1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1061pF @ 25V Current - Continuous Drain (Id) @ 25°C: 30A Drain to Source Voltage (Vdss): 40V Power - Max: 38W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: LFPAK56D |
Produkt ist nicht verfügbar |
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| BUK9K18-40E,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 24A; Idm: 124A; 38W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 24A Pulsed drain current: 124A Power dissipation: 38W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 39.2mΩ Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |