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BUK9K31-100LX

BUK9K31-100LX Nexperia

BUK9K31-100L.pdf Hersteller: Nexperia
MOSFETs Dual N-Channel 100V, 31 mOhm logic level MOSFET in LFPAK56D
auf Bestellung 173 Stücke:
Lieferzeit 10-14 Tag (e)
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2+2.01 EUR
10+1.36 EUR
100+1.03 EUR
500+0.88 EUR
1000+0.71 EUR
1500+0.67 EUR
3000+0.64 EUR
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Technische Details BUK9K31-100LX Nexperia

Description: BUK9K31-100L/SOT1205/LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 43W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 25V, Rds On (Max) @ Id, Vgs: 31.7mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.05V @ 50µA, Supplier Device Package: LFPAK56D, Grade: Automotive, Qualification: AEC-Q101.

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BUK9K31-100LX BUK9K31-100LX Hersteller : Nexperia USA Inc. BUK9K31-100L.pdf Description: BUK9K31-100L/SOT1205/LFPAK56D
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 25V
Rds On (Max) @ Id, Vgs: 31.7mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.05V @ 50µA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
12+1.50 EUR
100+1.00 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K31-100LX BUK9K31-100LX Hersteller : Nexperia USA Inc. BUK9K31-100L.pdf Description: BUK9K31-100L/SOT1205/LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 25V
Rds On (Max) @ Id, Vgs: 31.7mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.05V @ 50µA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q101
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