BUK9K32-100EX Nexperia
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 233+ | 0.59 EUR |
| 241+ | 0.55 EUR |
| 250+ | 0.52 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.45 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK9K32-100EX Nexperia
Description: MOSFET 2N-CH 100V 26A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 64W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 26A, Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V, Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Part Status: Active, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote BUK9K32-100EX nach Preis ab 0.43 EUR bis 2.57 EUR
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BUK9K32-100EX | Hersteller : Nexperia |
 Trans MOSFET N-CH 100V 26A Automotive AEC-Q101 8-Pin LFPAK-D T/R |
auf Bestellung 1200 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K32-100EX | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 26A Automotive AEC-Q101 8-Pin LFPAK-D T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K32-100EX | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 26A Automotive AEC-Q101 8-Pin LFPAK-D T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K32-100EX | Hersteller : Nexperia |
MOSFETs Dual N-channel 100 V, 33 mohm logic level MOSFET |
auf Bestellung 3818 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K32-100EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 26A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 64W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 26A Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K32-100EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 26A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 64W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 26A Input Capacitance (Ciss) (Max) @ Vds: 3168pF @ 25V Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 27.3nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
auf Bestellung 5375 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K32-100EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 26A Automotive 8-Pin LFPAK-D T/R |
Produkt ist nicht verfügbar |
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BUK9K32-100EX | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 26A Automotive AEC-Q101 8-Pin LFPAK-D T/R |
Produkt ist nicht verfügbar |
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| BUK9K32-100EX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 19A; Idm: 106A; 64W Power dissipation: 64W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27.3nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 106A Mounting: SMD Case: LFPAK33; SOT1210 Drain-source voltage: 100V Drain current: 19A On-state resistance: 91mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK9K32-100EX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 19A; Idm: 106A; 64W Power dissipation: 64W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27.3nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 106A Mounting: SMD Case: LFPAK33; SOT1210 Drain-source voltage: 100V Drain current: 19A On-state resistance: 91mΩ Type of transistor: N-MOSFET x2 Application: automotive industry |
Produkt ist nicht verfügbar |