BUK9K35-60RAX Nexperia
| Anzahl | Preis |
|---|---|
| 1500+ | 0.66 EUR |
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Technische Details BUK9K35-60RAX Nexperia
Description: MOSFET 2N-CH 60V 22A LFPAK56D, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: LFPAK56D, Vgs(th) (Max) @ Id: 2.1V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V, Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 38W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK9K35-60RAX nach Preis ab 0.64 EUR bis 1.25 EUR
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BUK9K35-60RAX | Hersteller : Nexperia |
 MOSFETs SOT1205 2NCH 60V 22A |
auf Bestellung 17136 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K35-60RAX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 22A LFPAK56D Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 2.1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 25V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 38W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K35-60RAX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 22A 8-Pin LFPAK-D T/R Automotive AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K35-60RAX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 22A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 38W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 25V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2489 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K35-60RAX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 22A 8-Pin LFPAK-D T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| BUK9K35-60RAX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 16A; Idm: 90A; 38W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Pulsed drain current: 90A Power dissipation: 38W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 79mΩ Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |