BUK9K45-100E,115 Nexperia
| Anzahl | Preis |
|---|---|
| 347+ | 0.42 EUR |
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Technische Details BUK9K45-100E,115 Nexperia
Description: MOSFET 2N-CH 100V 21A LFPAK56D, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: LFPAK56D, Vgs(th) (Max) @ Id: 2.1V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V, Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 21A, Drain to Source Voltage (Vdss): 100V, Power - Max: 53W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK9K45-100E,115 nach Preis ab 0.41 EUR bis 2.87 EUR
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BUK9K45-100E,115 | Hersteller : Nexperia |
 Trans MOSFET N-CH 100V 21A 8-Pin LFPAK-D T/R Automotive AEC-Q101 |
auf Bestellung 349 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K45-100E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 21A LFPAK56D Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 2.1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V Current - Continuous Drain (Id) @ 25°C: 21A Drain to Source Voltage (Vdss): 100V Power - Max: 53W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K45-100E,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Pulsed drain current: 83A Power dissipation: 53W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 124mΩ Mounting: SMD Gate charge: 33.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
auf Bestellung 1066 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K45-100E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 21A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 2984 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K45-100E,115 | Hersteller : Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K45-100E,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 21A 8-Pin LFPAK-D T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |