BUK9K45-100E,115 Nexperia
| Anzahl | Privatkunde |
|---|---|
| 347+ | 0.51 EUR |
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Lieferzeit:
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Mindestmenge:
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Technische Details BUK9K45-100E,115 Nexperia
Description: MOSFET 2N-CH 100V 21A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 53W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 21A, Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V, Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote BUK9K45-100E,115 nach Preis ab 0.5 EUR bis 3.42 EUR
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BUK9K45-100E,115 | Nexperia |
 Trans MOSFET N-CH 100V 21A 8-Pin LFPAK-D T/R Automotive AEC-Q101 |
auf Bestellung 349 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K45-100E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 21A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K45-100E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 21A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 2887 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K45-100E,115 | Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K45-100E,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Pulsed drain current: 83A Power dissipation: 53W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 124mΩ Mounting: SMD Gate charge: 33.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
auf Bestellung 1066 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BUK9K45-100E,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 100V 21A 8-Pin LFPAK-D T/R Automotive AEC-Q101
Trans MOSFET N-CH 100V 21A 8-Pin LFPAK-D T/R Automotive AEC-Q101
auf Bestellung 349 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 333+ | 0.54 EUR |
| 347+ | 0.5 EUR |
| BUK9K45-100E,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 21A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21A
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 21A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21A
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.82 EUR |
| BUK9K45-100E,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 21A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21A
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 21A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21A
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2887 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.87 EUR |
| 12+ | 1.81 EUR |
| 50+ | 1.36 EUR |
| 100+ | 1.2 EUR |
| 500+ | 0.94 EUR |
| BUK9K45-100E,115 |
|
Hersteller: Nexperia
MOSFETs The factory is currently not accepting orders for this product.
MOSFETs The factory is currently not accepting orders for this product.
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.42 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 0.93 EUR |
| BUK9K45-100E,115 |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 83A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 83A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1066 Stücke:
Lieferzeit 14-21 Tag (e)