BUK9K61-100LX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: BUK9K61-100L/SOT1205/LFPAK56D
Grade: Automotive
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.05V @ 30µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Rds On (Max) @ Id, Vgs: 60.1mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 32W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Qualification: AEC-Q101
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 8+ | 2.48 EUR |
| 12+ | 1.56 EUR |
| 50+ | 1.17 EUR |
| 100+ | 1.04 EUR |
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Technische Details BUK9K61-100LX Nexperia USA Inc.
Description: NEXPERIA - BUK9K61-100LX - Dual-MOSFET, Zweifach n-Kanal, 100 V, 15 A, 0.0601 ohm, tariffCode: 85412900, rohsCompliant: Y-EX, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: -, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 15A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 100V, euEccn: NLR, Bauform - Transistor: LFPAK56D, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0601ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Zweifach n-Kanal, Verlustleistung, n-Kanal: 32W, Betriebstemperatur, max.: 175°C, SVHC: Lead (25-Jun-2025).
Weitere Produktangebote BUK9K61-100LX nach Preis ab 0.72 EUR bis 2.66 EUR
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BUK9K61-100LX | Hersteller : Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
auf Bestellung 1168 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K61-100LX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9K61-100LX - Dual-MOSFET, Zweifach n-Kanal, 100 V, 15 A, 0.0601 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 15A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: LFPAK56D Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0601ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 32W Betriebstemperatur, max.: 175°C SVHC: Lead (25-Jun-2025) |
auf Bestellung 1368 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K61-100LX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9K61-100LX - Dual-MOSFET, Zweifach n-Kanal, 100 V, 15 A, 0.0601 ohm tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: Lead (25-Jun-2025) |
auf Bestellung 1368 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K61-100LX | Hersteller : Nexperia USA Inc. |
Description: BUK9K61-100L/SOT1205/LFPAK56D Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 2.05V @ 30µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V Rds On (Max) @ Id, Vgs: 60.1mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drain to Source Voltage (Vdss): 100V Power - Max: 32W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) |
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