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BUK9K6R2-40E,115

BUK9K6R2-40E,115 Nexperia USA Inc.


BUK9K6R2-40E.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.19 EUR
3000+1.18 EUR
Mindestbestellmenge: 1500
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Technische Details BUK9K6R2-40E,115 Nexperia USA Inc.

Description: MOSFET 2N-CH 40V 40A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 68W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 40A, Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V, Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

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BUK9K6R2-40E,115 BUK9K6R2-40E,115 Hersteller : Nexperia USA Inc. BUK9K6R2-40E.pdf Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
10+2.12 EUR
100+1.65 EUR
500+1.4 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K6R2-40E,115 BUK9K6R2-40E,115 Hersteller : Nexperia BUK9K6R2-40E.pdf MOSFETs The factory is currently not accepting orders for this product.
auf Bestellung 909 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.31 EUR
10+2.08 EUR
100+1.39 EUR
500+1.11 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BUK9K6R2-40E,115 BUK9K6R2-40E,115 Hersteller : Nexperia 3005704639330261buk9k6r2-40e.pdf Trans MOSFET N-CH 40V 40A 8-Pin LFPAK-D T/R Automotive AEC-Q101
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BUK9K6R2-40E,115 Hersteller : NEXPERIA BUK9K6R2-40E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 295A; 68W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 295A
Power dissipation: 68W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±10V
On-state resistance: 6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH