BUK9K6R8-40EX Nexperia
| Anzahl | Preis |
|---|---|
| 3000+ | 0.73 EUR |
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Technische Details BUK9K6R8-40EX Nexperia
Description: MOSFET 2N-CH 40V 40A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 64W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 40A, Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V, Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Part Status: Active, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote BUK9K6R8-40EX nach Preis ab 0.74 EUR bis 4.31 EUR
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BUK9K6R8-40EX | Hersteller : Nexperia |
 Trans MOSFET N-CH 40V 40A 8-Pin LFPAK-D T/R Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9K6R8-40EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 40A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 64W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K6R8-40EX | Hersteller : Nexperia |
MOSFETs SOT1205 2NCH 40V 40A |
auf Bestellung 196 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K6R8-40EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 40A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 64W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 5787 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9K6R8-40EX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 40A 8-Pin LFPAK-D T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| BUK9K6R8-40EX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 265A; 64W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 265A Power dissipation: 64W Case: LFPAK56D; SOT1205 On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 22.2nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |